Sub-30 Nm Sample Preparation And Limited-Angle Stem Tomography H/F

As semiconductor devices become smaller and more complex, structural information from 2D STEM images becomes harder to interpret because projection effects and overlapping features through conventional FIB lamellae can obscure nanoscale structures. The internship will improve both sample preparation and STEM characterization. Lamellae thinner than 30 nm will be prepared using FIB milling followed by low-energy argon-ion polishing. Limited-angle electron tomography will then reconstruct the cent…